Crystal Truncation Rod ( CTR ) measurements allow detailed determination of atomic structure at the surface, especially useful in cases of oxidation, epitaxial growth, and adsorption studies on crystalline surfaces.
12.
The epitaxial growth of austenite on the diamond ( 100 ) face is feasible because of the close lattice match and the symmetry of the diamond ( 100 ) face is fcc.
13.
The application of epitaxial growth of silicon on sapphire substrates for fabricating MOS devices involves a silicon purification process that mitigates crystal defects which result from a mismatch between sapphire and silicon lattices.
14.
She has worked on strain relaxation in lattice-mismatched semiconductor heterostructures, diffusion barriers and electrical contacts for silicon and III-V semiconductor based devices, epitaxial growth and nucleation, and electron transport through thin films and interfaces.
15.
Indium phosphide-based photonic integrated circuits, or PICs, commonly use alloys of x 1-x y 1-y to construct quantum wells, waveguides and other photonic structures, lattice matched to an InP substrate, enabling single-crystal epitaxial growth onto InP.
16.
In 1963 he was the first to document epitaxial growth of silicon on sapphire, and in 1968 was the first to publish on metalorganic chemical vapor deposition ( MOCVD ) for the epitaxial growth of GaAs.
17.
In 1963 he was the first to document epitaxial growth of silicon on sapphire, and in 1968 was the first to publish on metalorganic chemical vapor deposition ( MOCVD ) for the epitaxial growth of GaAs.
18.
The solidification leads to epitaxial growth of silicon and gold on top of the silicon substrate resulting in numerous small silicon islands protruding from a polycrystalline gold alloy ( compare to cross-section image of the bonding interface ).
19.
The technical complications involved in growing the III-V material on silicon at the required high temperatures, a subject of study for some 30 years, are avoided by epitaxial growth of silicon on GaAs at low temperature by Plasma-enhanced chemical vapor deposition ( PECVD)
20.
The technical complications involved in growing the III-V material on silicon at the required high temperatures, a subject of study for some 30 years, are avoided by epitaxial growth of silicon on GaAs at low temperature by plasma-enhanced chemical vapor deposition ( PECVD)
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