Representative scheme of the section of a field effect transistor based on a monolayer of MoS 2
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Field effect transistors were fabricated from those.
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"switching mixers " use arrays of field effect transistors or ( in older days ) vacuum tubes.
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Ion gels have been successfully used as gate insulators for field effect transistors which reduces the voltage requirements.
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This high mobility allows the fabrication of higher-speed P-channel field effect transistors, which are required for CMOS logic.
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The input impedance for high-impedance amplifiers ( such as vacuum tubes, field effect transistor amplifiers and pF ).
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VTVMs were used before the introduction of electronic high-impedance analog transistor and field effect transistor voltmeters ( FETVOMs ).
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The second is using thin ruthenium films as metal gates in p-doped metal-oxide-semiconductor field effect transistors ( p-MOSFETs ).
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Power dissipation within traditional metal oxide semiconductor field effect transistors ( MOSFETs ) generates a bottleneck when dealing with nano-electronics.
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Field emission displays ( FED ), strain sensors, and field effect transistors ( FET ) using CNTs have been demonstrated.
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