Germanium doping of up to 20 % in the P-channel MOSFET source and drain causes uniaxial compressive strain in the channel, increasing hole mobility.
12.
The third advantage of silicon is that it possesses a higher hole mobility compared to GaAs ( 500 versus 400 cm 2 V " 1 s " 1 ).
13.
The placement of the p-type layer on top is also due to the lower hole mobility, allowing the holes to traverse a shorter average distance for collection to the top contact.
14.
Hole mobility in MEH-PPV is 0.1 cm 2 �V " 1 �s " 1, while in silicon it is 450 cm 2 �V " 1 �s " 1.
15.
Although compensation can be used to increase or decrease the number of donors or acceptors, the electron and hole mobility is always decreased by compensation because mobility is affected by the sum of the donor and acceptor ions.
16.
This low hole mobility has been attributed to many physical aspects of the material, including the presence of dangling bonds ( silicon with 3 bonds ), floating bonds ( silicon with 5 bonds ), as well as bond reconfigurations.
17.
Electron mobility of ZnO strongly varies with temperature and has a maximum of ~ 2000 cm 2 / ( V�s ) at 80 K . Data on hole mobility are scarce with values in the range 5 30 cm 2 / ( V�s ).
18.
Pentacene is a popular choice for research on organic thin-film transistors and OFETs, being one of the most thoroughly investigated conjugated organic molecules with a high application potential due to a hole mobility in OFETs of up to 5.5 cm 2 / ( V�s ), which exceeds that of amorphous silicon.
19.
Its electron mobility is 200 cm��V & minus; 1 �s & minus; 1 and hole mobility 400 cm��V & minus; 1 �s & minus; 1 at 300 K . Its refractive index is 3.3 at a wavelength of 2 �m, and its dielectric constant is 10.9 at microwave frequencies.
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