At very high doping levels, the junction does not behave as a rectifier anymore and becomes an ohmic contact.
12.
The paste is then fired at several hundred degrees Celsius to form metal electrodes in ohmic contact with the silicon.
13.
However, this is less serious for Ohmic contact on GaN only . ( Please see references [ 8 ] .)
14.
In general the technology of ohmic contacts for III-V and II-VI semiconductors is much less developed than for Si.
15.
It is commonly implemented in MOS / CMOS processes for ohmic contacts of the source, drain, and poly-Si gate ..
16.
The dependence of contact resistance on the details of the interfacial chemistry is what makes the reproducible fabrication of ohmic contacts such a manufacturing challenge.
17.
To form an excellent ohmic contact ( low resistance ), the barrier height should be small everywhere and furthermore the interface should not reflect electrons.
18.
Non-ohmic contacts come in a number of forms ( p n junction, Schottky barrier, rectifying heterojunction, breakdown junction, etc . ).
19.
The schottky contact must be formed between the counter electrode and the tip of the nanowire since the ohmic contact will neutralize the electrical field generated at the tip.
20.
For the second case, a model with a vertically grown nanowire stacked between the ohmic contact at its bottom and the schottky contact at its top is considered.
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