Examination of the above equation, indeed reveals that small diameters ( 100 nm ) exhibit small driving forces for whisker growth while large wire diameters exhibit large driving forces.
12.
The VLS mechanism was proposed in 1964 as an explanation for silicon whisker growth from the gas phase in the presence of a liquid gold droplet placed upon a silicon substrate.
13.
With all of these products in the field, no significant numbers of tin whisker-related failures have been reported . " Whisker growth occurs slowly over time, is unpredictable, and not fully understood, so time may be the only true test of these efforts.
14.
More specifically, ??0 is the difference between the chemical potential of the depositing species ( Si in the above example ) in the vapor and solid whisker phase . ??0 is the initial difference proceeding whisker growth ( when d \ rightarrow \ infty ), while \ Omega is the atomic volume of Si and \ alpha the specific free energy of the wire surface.
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