Unlike graphene, hexagonal boron nitride is electrically insulating, and can be combined with graphene and other 2D materials to make van der Waals heterostructure devices.
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Most notably, in 1963 he proposed the concept of the double-heterostructure laser, which is now a central concept in the field of semiconductor lasers.
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Although both sides of the heterostructure are insulators, the 2DEG at the interface may arise even without doping ( which is the usual approach in semiconductors ).
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An example is longitudinal optical ( LO ) phonons that are in AlGaAs / GaAs heterostructure and thus, phonons presented in this proposed system are three-dimensional.
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Nanoflakes can be used for solution-processed fabrication of layered memristive and memcapacitive devices through engineering a [ [ MoOx | ] ] / heterostructure sandwiched between silver electrodes.
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AlGaInP is used in manufacture of light-emitting diodes of high-brightness red, orange, green, and yellow color, to form the heterostructure emitting light.
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On March 7, 1975, Henry and Dingle filed a patent entitled " Quantum Effects in Heterostructure Lasers, " which was issued on Sept . 21, 1976.
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Finding materials that stimulate emission was needed for the development of the SASER . The generation of coherent phonons in a double-barrier semiconductor heterostructure was first proposed around 1990.
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However, publication of the announcement of the first room temperature continuously operating double heterostructure laser was by Zhores Alferov in 1970 one month before Hayashi and Panish published similar results.
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Each of the junctions between different bandgap materials is called a " heterostructure ", hence the name " double heterostructure laser " or " DH " laser.
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