A SiC Schottky diode with a breakdown voltage of 1200 V is commercially available, as is a 1200 V JFET . As both are majority carrier devices, they can operate at high speed.
22.
"' Low level injection "'conditions for a P-N junction refers to the state where the number of minority carriers generated are small compared to the majority carriers of the material.
23.
The voltage measured is equal to the difference in the quasi Fermi levels of the majority carriers ( electrons in the n-type portion and holes in the p-type portion ) at the two terminals.
24.
Note that the photogenerated majority carriers will also diffuse towards the surface but their number as a fraction of the thermally generated majority carrier density in a moderately doped semiconductor will be too small to create a measurable photovoltage.
25.
Note that the photogenerated majority carriers will also diffuse towards the surface but their number as a fraction of the thermally generated majority carrier density in a moderately doped semiconductor will be too small to create a measurable photovoltage.
26.
The fact that the charge carriers are majority carriers yields high switching speeds, and the fact that the low band gap semiconductor is undoped means that there are no donor atoms to cause scattering and thus yields high mobility.
27.
Another example of frequency dependent capacitance occurs with MOS capacitors, where the slow generation of minority carriers means that at high frequencies the capacitance measures only the majority carrier response, while at low frequencies both types of carrier respond.
28.
The first theory that predicted the correct direction of rectification of the metal semiconductor junction was given by drift currents of the majority carriers through the semiconductor surface space charge layer which has been known since about 1948 as the Mott barrier.
29.
Due to low level injection ( in which there are much fewer excess carriers than normal majority carriers ) the ambipolar transport rates ( in which the excess majority and minority carriers flow at the same rate ) is in effect determined by the excess minority carriers.
30.
On the other hand, majority carriers are driven into the drift region by diffusion ( resulting from the concentration gradient ), which leads to the forward current; only the majority carriers with the highest energies ( in the so-called Boltzmann tail; cf.
How to say majority carrier in Hindi and what is the meaning of majority carrier in Hindi? majority carrier Hindi meaning, translation, pronunciation, synonyms and example sentences are provided by Hindlish.com.
