GTO thyristors incapable of blocking reverse voltage are known as asymmetrical GTO thyristors, abbreviated A-GTO, and are generally more common than Symmetrical GTO thyristors.
22.
IGCTs incapable of blocking reverse voltage are known as asymmetrical IGCT, abbreviated A-IGCT . They typically have a reverse breakdown rating in the tens of volts.
23.
Compared to later silicon or germanium devices, copper-oxide rectifiers tended to have poor efficiency, and the reverse voltage rating was rarely more than a few volts.
24.
They carry performance specifications such as peak repetitive off voltage, peak repetitive reverse voltage, root mean square ( RMS ) on-state current, and temperature junction.
25.
With a reverse voltage applied, a reverse leakage current flows in very small areas of microcracks or other defects across the dielectric layer to the anode of the electrolytic capacitor.
26.
IGCTs capable of blocking reverse voltage are known as symmetrical IGCT, abbreviated S-IGCT . Usually, the reverse blocking voltage rating and forward blocking voltage rating are the same.
27.
A reverse voltage higher than the type-dependent threshold level applied for a long time to the polymer electrolyte capacitor leads to short-circuit and to destruction of the capacitor.
28.
At a reverse voltage lower than " 1.5 V at room temperature, the cathode aluminum foil begins to build up an oxide layer corresponding to the applied voltage.
29.
GTO thyristors capable of blocking reverse voltage are known as Symmetrical GTO thyristors, abbreviated S-GTO . Usually, the reverse blocking voltage rating and forward blocking voltage rating are the same.
30.
If very high gain is needed ( 10 5 to 10 6 ), certain APDs ( single-photon avalanche diodes ) can be operated with a reverse voltage above the APD's breakdown voltage.
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