When a high enough potential is applied to the diode, the charge carrier density along the cathode becomes unstable, and will develop small slices of low conductivity and high field strength which move from the cathode to the anode.
32.
The gradient driving the diffusion is then the difference between the large excess minority carrier densities at the barrier and the low densities in the bulk, and that gradient drives diffusion of minority carriers from the interface into the bulk.
33.
In a semiconductor laser, the optical pulses are generated by injecting a large number of carriers ( electrons ) into the active region of the device, bringing the carrier density within that region from below to above the lasing threshold.
34.
In the simple " p n " diode the forward current increases exponentially with forward bias voltage due to the exponential increase in carrier densities, so there is always some current at even very small values of applied voltage.
35.
H are usually expressed as m 3 / C, or ?�cm / G, or other variants . ) As a result, the Hall effect is very useful as a means to measure either the carrier density or the magnetic field.
36.
Usually this energy ( sometimes called the defect energy level ) together with the plot intercept value are defect parameters used for its identification or analysis . On samples with low free carrier density conductance transients have also been used for a DLTS analysis.
37.
On the other hand, near the interface, application of voltage " v D " reduces the step in band edges and increases minority carrier densities by a Boltzmann factor exp ( " v D / V th " ) above the bulk values.
38.
The same procedure can be used to calculate the kinetic inductance of a normal ( i . e . non-superconducting ) wire, except with 2m replaced by m, 2e replaced by e, and n _ { s } replaced by the normal carrier density n.
39.
Where " n i " is the carrier density and the heat capacity is per carrier, " u i " is the carrier speed and " ? i " is the mean free path ( distance traveled by carrier before an scattering event ).
40.
In 1952, Lars Onsager explained the physics behind the effect, and, due to his interpretation, this effect can be used to image the Fermi surface of a metal, to measure the carrier density and more, which makes this a very powerful probing technique in condensed-matter physics.
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