As opposed to wafer-level methods of inducing strain on the channel layer prior to MOSFET fabrication, the aforementioned methods use strain induced during the MOSFET fabrication itself to alter the carrier mobility in the transistor channel.
32.
Single wall carbon nanotubes possess a wide range of direct bandgaps matching the solar spectrum, strong photoabsorption, from infrared to ultraviolet, and high carrier mobility and reduced carrier transport scattering, which make themselves ideal photovoltaic material.
33.
Where x _ \ text { j } is the junction depth, \ mu is the majority-carrier mobility, q is the carrier charge, and N ( x ) is the net impurity concentration in terms of depth.
34.
DSSCs are therefore able to work under cloudy skies and non-direct sunlight, whereas traditional designs would suffer a " cutout " at some lower limit of illumination, when charge carrier mobility is low and recombination becomes a major issue.
35.
They have bandgaps of 2.18 eV for CH 3 NH 3 PbBr 3 and 1.51 eV for CH 3 NH 3 PbI 3, while their respective carrier mobilities are 24 and 67 V / ( cm 2 �s ).
36.
These, and the HEMTs ( high-electron-mobility transistors, or HFETs ), in which a two-dimensional electron gas with very high carrier mobility is used for charge transport, are especially suitable for use at very high frequencies ( microwave frequencies; several GHz ).
37.
It has a high charge carrier mobility and charge carrier lifetime that allow light-generated electrons and holes to move far enough to be extracted as current, instead of losing their energy as heat within the cell . effective diffusion lengths are some 100 nm for both electrons and holes.
38.
As expected, polystannanes were pulse radiolysis microwave conductivity measurements of poly ( dibutylstannane ) yielded values of charge-carrier mobilities of 0.1 to 0.03 cm2 V " 1 s " 1, which are similar to those found for pi-bond-conjugated carbon-based polymers.
39.
As \ mu = q \ tau _ c / [ m ( 1 + j \ omega ) ] and G = q \ mu \ overline { N } / L ^ 2 are the carrier mobility and the conductance of the device, from the above equation and the Wiener-Khintchine theorem we recover the result
40.
More recently, Ruoff and collaborators have demonstrated synthesis of large area monolayer graphene on copper foil by chemical vapor deposition, for which relatively high carrier mobilities have been obtained, and subsequently have used isotopic labeling and micro-Raman mapping to map grains and grain boundaries in such atom thick layers and to elucidate growth mechanisms, and studied their performance as transparent conductive electrodes.
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