That IEDM publication described the self-aligned gate transistor fabricated with both metal and polysilicon as the gate material and using both ion implantation and diffusion to form the source and drains.
32.
Plasma immersion ion implantation ( PIII ) is a physical technique which can enhance the multi-functionality, mechanical and chemical properties as well as biological activities of artificial implants and biomedical devices.
33.
Applications such as ion implantation may be used to identify the distribution of dopants inside a semi-conducting material, which is increasingly critical in the correct design of modern nanometre scale electronics.
34.
During manufacture, dopants can be diffused into the semiconductor body by contact with gaseous compounds of the desired element, or ion implantation can be used to accurately position the doped regions.
35.
In967, he was chosen by Academic Press to author the first monograph on Ion Implantation of Semiconductors and by 1970 ion implantation first began being used in the commercial production of integrated circuits.
36.
His accomplishments played a critical role in the development of the solid-state particle detector; the field of ion beam analysis of materials, and ( iii ) the application of ion implantation to semiconductors.
37.
In967, he was chosen by Academic Press to author the first monograph on Ion Implantation of Semiconductors and by 1970 ion implantation first began being used in the commercial production of integrated circuits.
38.
In this sense a " triode " type PIII implanter is a crude version of ion implantation because it does not contain plethora of components like ion beam steering, beam grid accelerators etc.
39.
It was also determined in a number of court cases that the vast majority of self-aligned gate FETs were made using ion implantation rather than diffusion to introduce the dopants into the source-drain regions.
40.
These companies were chosen because they could do the ion implantation needed to create the depletion-mode MOSFETs that the Z80 design used as load transistors in order to cope with a single 5 Volt power supply.
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