For electrical initiation, a momentary contact at 10A / 5V is sufficient; for ohmic contact, 120-150 amperes is needed for a 15 micrometer diameter contact, and 250-300 A for a 300 micrometer contact.
32.
Lightly doped p-type regions pose a problem, as the resulting contact has too high a resistance for a good ohmic contact, but too low a forward voltage and too high a reverse leakage to make a good diode.
33.
However, your first sentence is still true; most practical ohmic contacts are realized by making the Schottky barrier so thin that a large tunneling ( field electron emission ) current dominates the I-V characteristics of the metallurgical junction.
34.
Modern ohmic contacts to silicon such as titanium-tungsten disilicide are usually silicides made by CVD . Contacts are often made by depositing the transition metal and forming the silicide by annealing with the result that the silicide may be non-stoichiometric.
35.
Dr . Lau also worked on Ohmic contact technology for GaN and AlGaN / GaN HEMT . He noticed that the presence of a small quantity of moisture in the rapid thermal annealing chamber is particularly bad for Ohmic contact on AlGaN / GaN HEMT wafers.
36.
Dr . Lau also worked on Ohmic contact technology for GaN and AlGaN / GaN HEMT . He noticed that the presence of a small quantity of moisture in the rapid thermal annealing chamber is particularly bad for Ohmic contact on AlGaN / GaN HEMT wafers.
37.
Metal metal ohmic contacts are relatively simpler to make, by ensuring direct contact between the metals without intervening layers of insulating contamination or oxidation; various techniques are used to create ohmic metal-metal junctions ( soldering, welding, deposition, electroplating, etc . ).
38.
Structures as simple as an ohmic contact ( the electrical interface between a semiconductor device and a conducting wire ) and as complicated as HFETs / HEMTs, RTDs, several types of laser diode, etc; all are designed to use quantum tunneling in their primary operation.
39.
This can be used for the simultaneous formation of ohmic contacts and diodes, as a diode will form between the silicide and lightly doped n-type region, and an ohmic contact will form between the silicide and the heavily doped n-or p-type region.
40.
This can be used for the simultaneous formation of ohmic contacts and diodes, as a diode will form between the silicide and lightly doped n-type region, and an ohmic contact will form between the silicide and the heavily doped n-or p-type region.
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