41. The GaInAs device is normally grown on an indium phosphide ( InP ) substrate. 42. Indium gallium arsenide ( InGaAs ) is also a compound III-V semiconductor.43. Indium sulfide was the first indium compound ever described, being reported in 1863.44. Indium sulfide was the first indium compound ever described, being reported in 1863. 45. Solid anhydrous indium sulfate has two crystalline forms. 46. Each indium atom is five coordinate, in a distorted TlMe 3 are similar. 47. Another well known example is indium tin oxide. 48. "' Indium trihydride "'is an standard temperature and pressure. 49. In addition, as a seal indium will not pump out or dry out. 50. Two more conductive materials that have notable characteristics are tungsten and indium tin oxide.
