If the electron receives enough energy to leave the valence band, and to surpass the conduction band, it becomes a hot electron.
42.
In HgCdTe, detection occurs when an infrared photon of sufficient energy kicks an electron from the valence band to the conduction band.
43.
In silicon, sunlight can provide enough energy to push an electron out of the lower-energy valence band into the higher-energy conduction band.
44.
When a disturbance from a thermal equilibrium situation occurs, the populations of the electrons in the conduction band and valence band change.
45.
Once they are in the conduction band, they can conduct electricity, as can the hole they left behind in the valence band.
46.
In an intrinsic semiconductor the number of electrons in the conduction band is equal to the number of holes in the valence band.
47.
Additionally, the effective mass of holes in the valence band is changed to more closely match that of electrons in the conduction band.
48.
Extreme-ultraviolet photoelectron spectroscopy ( EUPS ) lies in between XPS and UPS . It is typically used to assess the valence band structure.
49.
The ease of exciting electrons in the semiconductor from the valence band to the conduction band depends on the band gap between the bands.
50.
Increasing concentrations of carbon in the alloy widen the electronic gap between conduction and valence bands ( also called " optical gap " and bandgap ).
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