The assumed mechanism is trapping of migrating vacancy by substitutional silicon resulting in the Si-V ( semi-divacancy ) configuration.
2.
It was assigned to a sulfur-vacancy complex again, as in case of nickel and silicon, a semi-divacancy site.
3.
Similar to other large impurities, the major form of silicon in diamond has been identified with a Si-vacancy complex ( semi-divacancy site ).
4.
A similar mechanism is expected for nickel, for which both substitutional and semi-divacancy configurations are reliably identified ( see subsection " nickel and cobalt " above ).
5.
The " nickel-vacancy " structure, also called " semi-divacancy " is specific for most large impurities in diamond and silicon ( e . g ., tin in silicon ).
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